Jelight Co.Inc.established in 1978, is a recognized producer of quality ultraviolet light sources and related equipment. The expertise gained throughout the years has assisted us in designing UV wafer and EPROM erasers with superior performance and productivity. High Intensity UV Lamp Design Operating intensity is at least 25% greater than competitive systems for increased throughput. Excellent uniformity insures fast and complete erasure.
How Do EPROMs Work?
The basic memory element was developed by Frohman-Bentchkowsky at Intel Corporation and was known as the Floating-Gate-Avalanche-Injection MOS (FAMOS) transistor. It was essentially a silicon gate MOS field effect transistor in which no connection was made to the gate. The gate was in fact electrically "floating" in an insulating layer of silicon dioxide. The devices have been fabricated in two structures: p-channel and n-channel. The p-channel devices were the first EPROMs available commercially, but many devices are now using n-channel technology. N-channel MOS devices have the advantage of being able to function with a single power supply.
By application of sufficiently large potential difference between the source and drain, charge can be injected into the "floating" gate which induces a charge in the substrate. The source-to-drain impedance changes and a "p-channel" or "n-channel" is created, depending upon the type of substrate. The presence or absence of conduction is the principle of data storage. Application of short wave (254 nm) ultraviolet radiation causes the gate charge to leak away and restores the device to its original unprogrammed state. EPROM manufacturers provide "nominal erasing energies" to their devices; the amount of UV energy required to erase a chip's memory. Erasing time can be calculated using following formula:
Most EPROMs have a nominal erasing energy of 15W-sec/cm². Some chips, however, require as little as 6 or 10W-sec/cm², or as much as 25W-sec/cm², for complete erasure.
Features
Quick load/unload trays for wafers and EPROM
All-metal housing.
Heavy duty construction for ruggedness.
Units may be stacked to save space.
Safety interlock to prevent accidental UV exposure.
Capacity
Erasing area
Typical intensity
Erasing time (minutes)
Power
requirements
Housing dimmension
Timer
Model
Inividual EPROMS
3" Wafers
4" Wafers
5" Wafers
6" Wafers
8" Wafers
Width
Depth
Height
µW/cm2
Nominal erasing energy
V
Hz
Amp
W
D
H
6
10
15
W-sec/cm2
2442
1071
112
60
32
28
15
42.00
24.00
2.50
50.000
2.0
3.3
5.0
200-240
50
35
48
40
17
D
2436
918
96
54
0
24
12
36.00
24.00
2.50
50.000
2.0
3.3
5.0
100-120
60
25
42
40
17
D
2436-220
918
96
54
28
24
12
36.00
24.00
2.50
50.000
2.0
3.3
5.0
200-240
50
25
42
40
17
D
1630
510
50
28
18
10
6
30.50
16.50
5.50
50.000
2.0
3.3
5.0
200-240
60
S
36
32
17
D
1630-220
510
50
28
18
10
6
30.50
16.50
5.50
50.000
2.0
3.3
5.0
200-240
50
S
36
32
17
D
1224
306
32
18
8
8
3
24.00
12.00
2.40
50.000
2.0
3.3
5.0
100-120
60
S
28
26
12
D
1224-220
306
32
18
8
8
3
24.00
12.00
2.40
50.000
2.0
3.3
5.0
200-240
50
S
28
26
12
D
9290
153
16
9
4
4
1
12.00
12.00
2.21
50.000
2.0
3.3
5.0
100-120
60
17
17
26
12
D
9290-220
153
16
9
4
4
1
12.00
12.00
2.21
50.000
2.0
3.3
5.0
200-240
50
S
17
26
12
D
356
75
6
2
1
1
0
6.78
10.50
1.25
50.000
2.0
3.3
5.0
100-120
60
S
11
20
11
D
356-220
75
6
2
2
1
0
6.78
10.50
1.25
50.000
2.0
3.3
5.0
200-240
50
S
11
20
11
D
20
20
0
0
0
0
0
3.75
3.75
0.00
15.000
6.7
11.1
16.7
100-120
60
S
5
10
2
Dial
10
12
0
0
0
0
0
2.00
5.00
0.00
15.000
6.7
11.1
16.7
100-120
60
S
3
10
2
None
Nominal Erasing Energy
Erasing Capability: Chips/Hour
6W-sec/cm²
11,250 to 45,000
10W-sec/cm²
5,985 to 23,940
15W-sec/cm²
4,500
ALSO AVAILABLE :
CUSTOM CONVEYOR BELT SYSTEMS UTILIZING UV GRID LAMPS FOR EPROM ERASING.
CUSTOM CHIPhERASERS OF LARGER DIMENSIONS AND CAPACITIES.
REPLACEMENT GRID LAMPS FOR OTHER EPROM ERASING AND UVO- Cleaning SYSTEMS.
